By H. Rohrer (auth.), R. J. Behm, N. Garcia, H. Rohrer (eds.)
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Extra resources for Scanning Tunneling Microscopy and Related Methods
Example text
20] Proceedings Third International Conference on STM, Oxford, England (1988), published in J. Microscopy 125, Pt. 1-3. [21] Proceedings Fourth International Conference on STM, Oarai, Japan (1989), to be published in J. Vac. Sci. Technol. A (1990). For a descriptive summary of the Erice NATO Meeting, see di Capua, M. , and Marti, O. (1989) Europ. Sci. S. Navy, Office of Naval Research, European Office, London, UK) [22] Binnig, G. and Rohrer, H. (1986) IBM J. Res. Develop. 30, 355. [23] Hansma, P.
When eV = ~R-~L the peak in the density of thermally occupied states immediately above the energy gap of the left electrode faces the peak in the density of unoccupied states immediately above the energy gap of the right electrode and there is a well defined local maximum in the quasiparticle tunneling current. When eV = ~R + ~L the peak in the density of occupied 44 states immediately below the energy gap of the left electrode gains access to the large density of unoccupied states above the energy gap of the right electrode leading to an abrupt increase in current with further increase in bias.
2. e. kz > 0). ~Conservation of energy E for elastic scatteri2g and transverse momentum k t uniquely specifies the corresponding state k' of the righthand electrode into which the 1 incident electron can tunnel elastically: k~= Kt ; k~= h-I[2m(Ez+EF-EF)1~. Those states k' for which Ez < EF-EF are localized at the z=d interface (k~ is pure imaginary) and do not contribute to the tunneling current if the thickness of the right 1 • The z component of the incident electrode is much greater than Ik'Iz ~ current density associated with the state ~ is ehkz/m.