By Zhiping Yu, Robert W. Dutton (auth.), Dr. Dimitris Tsoukalas, Dr. Christos Tsamis (eds.)
This quantity includes the lawsuits of the foreign convention on Simulation of Semiconductor units and tactics, SISPAD 01, hung on September 5–7, 2001, in Athens. The convention supplied an open discussion board for the presentation of the newest effects and tendencies in method and equipment simulation. the fad in the direction of shrinking machine dimensions and lengthening complexity in approach expertise calls for the continual improvement of complicated types describing easy actual phenomena concerned. New simulation instruments are constructed to accomplish the hierarchy within the expertise computing device Aided layout simulation chain among microscopic and macroscopic techniques. The convention application featured eight invited papers, 60 papers for oral presentation and 34 papers for poster presentation, chosen from a complete of one hundred sixty five abstracts from 30 international locations worldwide. those papers expose new and engaging innovations for simulating tactics and devices.
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Additional info for Simulation of Semiconductor Processes and Devices 2001: SISPAD 01
Sample text
The presence of an interstitial sink at the wafer surface (term (Lsurr-Rp) in eq. 2) imposes a "pinning" of the SiinrS supersaturation that linearly decreases from the defect region towards the surface, as schematical1y shown in fig. lao This result implies that our model is equally applicable to both cases of crystalline and preamorphised substrates. In the first case, the defect region is generated by the boron implant itself and is located around the boron concentration peak. The boron diffusivity enhancement is therefore directly given by eq.
0 EA. 18 eV 0 0 3. 450~ ~~ f1. V .. :("d)c.. 40+--~--""""'--':'=;'=-_--~ 0 50 100 150 200 250 'Time (ps) Fig. 3. Time evolution of the potential energy per atom in samples with different IV pair contents during the annealing at several temperatures. Solid lines indicate the mean potential energy per atom in amorphous and crystal Si at each temperature, EAM and Ec, respectively. 45 eV, very close to the barrier obtained for IV pair recombination. This means that 10% is a concentration so low that IV pairs do not interact with each other, and thus the overall crystallization behavior is the same that when there is just one IV pair.
V. and Laux, S. E. (2000): Performance degradation of small silicon devices caused by long-range Coulomb interactions, App!. Phys. Lett. 76: 2277-2279 [4] Jakumeit, J. and Ravaioli, U. (2001), Semiconductor transport simulation with the Local Iterative Monte Carlo Technique, accepted for the April 2001 issue of IEEE Trans. Electron Devices [5] Jakumeit, J. (2000) Computational Aspects of the Local Iterative Monte Carlo Technique, Int. J. Mod. Phys. , Ravaioli, U. and Jakumeit, J. (1998): Full-Band Monte Carlo Investigation of Hot Carrier Trends in the Scaling of Metal-Oxide-Semiconductor Field-Effect Transistors.