By Nianxiong Tan
Switched-Current layout and Implementation of Oversampling A/DConverters discusses the switched-current (SI) method and its software in oversampling A/D converters layout. The SI approach is an analog sampled-data approach that absolutely exploits the electronic CMOS strategy. in comparison with the normal switched-capacitor (SC) approach, the SI procedure has either execs and cons which are highlighted within the ebook. With the honour of similarity and distinction of SI and SC options, oversampling A/D converter architectures are adapted and optimized for SI layout and implementation within the ebook.
Switched-Current layout and Implementation of Oversampling A/DConverters emphasizes the sensible points of SI circuits with no tedious mathematical derivations, and is filled with circuit layout and implementation examples. There are greater than 10 diverse chips integrated within the booklet, demonstrating the high-speed (over a hundred MHz) and ultra-low-voltage (1.2 V) operation of SI circuits and structures in commonplace electronic CMOS strategies. for that reason, the ebook is of specific worth as a pragmatic consultant for designing SI circuits and SI oversampling A/D converters.
Switched-Current layout and Implementation of Oversampling A/DConverters serves as a great reference for analog designers, specifically A/D converter designers, and is of curiosity to electronic designers for real-time sign processing who want A/D interfaces. The e-book can also be used as a textual content for complex classes at the subject.
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The value can be as low as 10 for short channel devices in order to have a high speed operation. The value can be increased by increasing the length at the cost of speed. Another way to increase the value is to add an extra capacitor at the gate, also at the cost of speed. To reduce the error due to the drain-gate capacitive coupling, circuit techniques such as the cascoding and grounded-gate amplifier techniques can be used as these techniques are used to reduce the finite input-output conductance ratio error.
Fully differential class-AB SI memory cell. The memory cell comprises one pair of memory transistors and one pair of GGAs. The memory transistor pair consist of transistors MN and Mp, and the GGA consists of the grounded-gate transistor T G' current biasing transistor Tp and cascode current bias transistors Tc and TN. 7) where glllN is the transconductance of the n-type memory transistor MNl (and MN2) , glllP is the transconductance of the p-type memory transistor MPI (and Mp2) , AGGA is the gain of the GGA, gmG is the transconductance of the grounded-gate transistor TG, and gdsG is the output conductance of the grounded-gate transistor TG.
Thermal noise imposes fundamental limitation in both SI circuits and se circuits, thought the noise in SI circuits is usually larger than that in se circuits due to the smaller value of the sampling capacitance. In the next chapter, we will present practical SI circuits and circuit techniques that can reduce the nonidealities we have discussed in this chapter. Chapter III. 1. INTRODUCTION SI circuits, as current-mode circuits feature inherently wide bandwidth and suitability for low-voltage operations and are completely compatible with the digital CMOS process [1, 17].